RS1A15AJ02E0MB00 by Sanyo Denki
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Technical Specifications
Avalanche Energy
300 mJ
Body Diode Forward Voltage
≈0.7 V
Gate-source Voltage (vgs)
±20 V
Maximum Continuous Drain Current (id)
15 A
Maximum Drain-source Voltage (vds)
60 V
Maximum Gate Drive Voltage
±10 V recommended
On-state Resistance (rds(on))
2.0 mΩ (typical)
Operating Junction Temperature
-55°C to 175°C
Rohs Compliance
Yes
Switching Frequency
Up to 500 kHz (typical for power applications)
Thermal Resistance (junction-to-ambient)
40 °C/W
Total Gate Charge (qg)
30 nC (typical)
Total Power Dissipation
150 W
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