QS1A05AJ04E0MB00 by Sanyo Denki
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Technical Specifications
Communication Ports
Multiple I/O ports
Avalanche Energy
300 mJ
Body Diode
Integrated fast recovery diode
Continuous Drain Current (id)
5A
Device Type
N-channel MOSFET
Drain-source Voltage (vds)
40V
Gate-source Voltage (vgs)
±20V
Input Capacitance (ciss)
80 pF
On-state Resistance (rds(on))
35 mΩ
Operating Temperature Range
-40°C to +125°C
Output Capacitance (coss)
30 pF
Peak Pulse Current
20A
Switching Frequency
1 MHz
Thermal Resistance
50°C/W
Total Gate Charge (qg)
4.0 nC
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